It is our pleasure to invite you to the PCIM Asia 2025 exhibition and conference, which will take place at the Shanghai New International Expo Centre in Shanghai, China from 24-26 September. Visit us at our booth D06, hall N5.
Get to know Hitachi Energy Ltd Semiconductors latest products, innovations, and highlights. Here is a brief overview of what we will focus on this year:
- HiPak (5SNA 1500G450350): High current HiPak 4.5kV ideal for Traction, Medium Voltage Drives or Grid Applications.
- HiPak (5SLD 1500J450350): High current diode HiPak 4.5kV necessary for NPC or Chopper function in Medium Voltage Drives or Traction Converters.
- LinPak (5SNG 1250X170500): Next Generation 1.7kV with Trench Fine Patter (TFP) technology in LV LinPak housing
- LinPak SiC (5SFG 1800X170100): High current density 1.7kV SiC LinPak
- LinPak (5SNG 0600Z330400): Next Generation 3.3kV Trench Enhanced Soft Punch Through (TPT+) IGBTs and Field Charge Extraction (FCE) diodes in HV LinPak module
- LoPak (5SNG 0750R170501): Next Generation of 1.7 kV chips set Trench Fine Pattern (TFP) in the standard industrial housing. Optional with TIM.
- StakPak (5SMA6250L450301): Most powerful IGBT switch in a StakPak module
- Thrystors:
- Phase Control Thyristor in Explosion protected Housing (6500 V / 3800 A): New 6.5 kV rated next generation industrial device offers 30% more performance compared to our actual platform. The device is available in special explosion protected housing or as standard variant.
- Large size Phase Control Thyristor (5800 V / 3800 A): Large size high voltage thyristor offering lowest losses and highest performance for most demanding applications as HVDC classic, Industrial and Renewable.
- Small size Phase Control Thyristor (6500 V / 850 A): Small size thyristor with best performance and lowest price.
- Bypass Thyristor (8400 V / 1300 A / 1 year SCFM): Used in Multilevel Converter (MMC) topologies to shorten faulty cells. When triggered, the device operates as a stable short circuit for more than a year.
- IGCT:
- 6 inch Reverse Conducting IGCT (6500 V / 8000 A): Highest power ratings and lowest losses for most compact and cost efficient applications such as HVDC or Renewables. Ideal for Multilevel Converter (MMC) with increased device voltage rating of 6.5 kV.
- 4 inch Asymmetric IGCT (6500 V / 6500 A): The new Generation 3 Asymmetric IGCT rated 6.5 kV improves thermal performance and turn-off capability by 30% vs. previous generation. Ideal for demanding applications such as HVDC or Industry.
- Diodes:
- Large size Fast Recovery Diode (FRD) (4500 V / 4400 A): New 4.5 kV rated large size FRD to be used as companion diode in most powerful IGBT or IGCT converters.
- Fast Recovery Diode (4500 V / 1800 A): Ideal device for use as companion diode in powerful and compact IGCT converters.
- Fast Recovery Diode (4500 V / 2700 A): New 4.5 kV rated FRD offers lowest losses, highest turn-off (SOA) and surge current capability and optimal reverse recovery softness behaviour.
- Rectifier Diode (6500 V / 5900 A): New 6.5 kV rated next generation industrial device offers the most compact solution for Aluminium Smelters or other demanding industrial applications.
- Housingless Welding diode (HLWD) (400 V / 13500 A): Our leading HLWD platform sets standards in resistance welding for Automotive industry.
- 60Pak - Diode module (6500 V / 500 A): The new 6.5 kV rated 60 mm industry standard module ideal for demanding medium voltage application.
- RoadPakTM with roadmount cooler
- SiC RoadPakTM automotive module up to 1200V 1150A
- EV Inverter: 950VDC/720Arms with RoadPakTM SiC Module, Courtesy of Shenzhen Jiansan
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